A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device

A. Delay time
B. Spread time
C. Rise time
D. Same for every case

A. Positive gate signal
B. Positive drain signal
C. Positive source signal
D. None of these

A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these

A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs

A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs

A. delay time
B. rise time
C. spread time
D. all

A. anode voltage drops from 10 % of its initial value to zero
B. anode current rises from 90 % to its final value
C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final value

A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times

A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base