A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C

A. IGBT
B. FCT
C. MCT
D. GTO

A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these

A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor

A. in series
B. in parallel
C. either series or parallel
D. anti parallel

A. To minimize the loss
B. To minimize the charging current
C. To minimize the discharging current
D. All of these

A. Unwanted turn ON
B. Breakdown of J2 junction
C. Both A and B
D. Anyone of these

A. Kq/T
B. KT/q
C. qT/K
D. (K2/q)(T + 1/T – 1)

A. Breakdown of junction
B. Local hot spot
C. Insulation failure
D. None of these

A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these