A. high current demand
B. low voltage demand
C. low current demand
D. high voltage demand

A. BJT
B. Power dioed
C. MOSFET
D. None of above

A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V.

A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS

A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these

A. SIT
B. BJT
C. TRIAC
D. IGBT

A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs

A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above

A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed

A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C