A power semiconductor may undergo damage due to____________?
A. High di/dt
B. High dv/dt
C. Low di/dt
D. Low dv/dt
CB used for over current protection of thyristor operates when the fault current is__________?
CB used for over current protection of thyristor operates when the fault current is__________?
A. of long period
B. of short duration
C. both (A) and (B)
D. neither (A) nor (B)
If the anode current is 800 A, then the amount of current required to turn off the GTO is about____________?
If the anode current is 800 A, then the amount of current required to turn off the GTO is about____________?
A. 20 A
B. 200 A
C. 600 A
D. 400 A
What is used to protect the SCR from over current ________________?
What is used to protect the SCR from over current ________________?
A. CB and fuse.
B. Heat sink.
C. Snubber circuit.
D. Voltage clamg device.
Under normal operating condition voltage clamping device offers impedance of_________?
Under normal operating condition voltage clamg device offers impedance of_________?
A. high value.
B. low value.
C. zero value.
D. moderate value.
Which semiconductor device acts like a diode and two transistor?
Which semiconductor device acts like a diode and two transistor?
A. UJT
B. Diac
C. Triac
D. SCR
Under over voltage condition impedance offered by the voltage clamping device is__________?
Under over voltage condition impedance offered by the voltage clamg device is__________?
A. low
B. High
C. moderate
D. infinity
The latching current of GTO should be of order
The latching current of GTO should be of order
A. 100 mA
B. 500 mA
C. 1 A
D. 2 A
The maximum di/dt in a SCR is____________?
The maximum di/dt in a SCR is____________?
A. Directly proportional to supply voltage
B. Directly proportional to inductance in the circuit
C. Inversely proportional to supply voltage
D. Both A and B
Example of a voltage clamping device______________?
Example of a voltage clamg device______________?
A. fast acting fuse
B. snubber circuit
C. metal oxide varistor
D. aluminium block