A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device
A. Across anode
B. In series with anode
C. Across cathode
D. In series with cathode
A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these
A. Load survey method
B. Mathematical method
C. Statistical method
D. Economic parameters
A. A parallel combination of controllable switch and a diode is used
B. A parallel combination of controllable switch and capacitor is used
C. A series combination of controllable switch and a diode is used
D. A series combination of controllable switch and a capacitor is used
A. One
B. two
C. Three
D. Four
A. BJT
B. Power dioed
C. MOSFET
D. None of above