A. Unwanted turn ON
B. Breakdown of J2 junction
C. Both A and B
D. Anyone of these
A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base
A. CB and fuse.
B. Heat sink.
C. Snubber circuit.
D. Voltage clamg device.
A. Line integrated stabilization network
B. Line impedance stabilization network
C. Line integrated stored network
D. Laser integrated stabilization networking
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter
A. high thermal conductivity
B. large surface area
C. high melting point
D. All of these
A. Only minority carriers
B. Only majority carriers
C. Both minority and majority carriers
D. None of these