The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device
A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 in reverse bias.
C. junction J1, J3 is in reverse bias and J2 is in forward bias.
D. junction J1 and J2 is in forward bias and J3 is in reverse bias.
A. Suppressing emissions
B. Reducing the efficiency of the coupling path
C. Reducing the susceptibility of the receptor
D. All of these
A. both as forward characteristics
B. both as reverse characteristics
C. former as forward characteristics and later as reverse characteristics
D. former as reverse characteristics and later as forward characteristics
A. SIT
B. BJT
C. TRIAC
D. IGBT
A. Does not contains second harmonic
B. Does not contains third harmonic
C. Does not contains fifth harmonic
D. Does not contains seventh harmonic
A. < latching current but greater than holding current and gate signal is 0.
B. less than holding current.
C. < latching current but greater than holding current and gate signal is present.
D. both (A) and (B).