A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 in reverse bias.
C. junction J1, J3 is in reverse bias and J2 is in forward bias.
D. junction J1 and J2 is in forward bias and J3 is in reverse bias.
A. high value.
B. low value.
C. zero value.
D. moderate value.
A. Identical to line voltage in a VSI
B. Identical to line current in VSI
C. Identical to phase voltage in VSI
D. Identical to phase voltage in CSI
A. String efficient
B. Reliability factor
C. Factor of safety
D. Derating factor