A. Zero
B. Switches between – 1 / 2 and + 1 / 2
C. Switches between – 1 and + 1
D. Switches between 0 and + 1
A. of long period
B. of short duration
C. both (A) and (B)
D. neither (A) nor (B)
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these
A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 is in reverse bias.
C. Junction J1, J3 is in reverse bias and J2 is in forward bias.
D. Junction J1 and J2 is in forward bias and J3 is in reverse bias.
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C