A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor
A. Symmetric triangular voltage across itself
B. Symmetric rectangular voltage across itself
C. Symmetric trapezoidal voltage across itself
D. Symmetric sinusoidal voltage across itself
A.It is related to turn off process of the device.
B. It is related to conduction process of device.
C. It is related to turn on process of the device.
D. Both C and D.
A. High speed operation
B. High rupturing capacity
C. No ageing effect
D. All of the above
A. Flyback capacitor
B. Flyback resistor
C. Flyback transformer
D. Flyback transistor
A. 0.01 A.
B. 0.002 A.
C. 0.009 A.
D. 0.004 A.
A. 60 degree
B. 90 degree
C. 120 degree
D. 150 degree