During gate recovery time_____________?
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
A. 180 degree
B. 190 degree
C. 200 degree
D. 210 degree
A. Root mean square value of voltage and current to its peak value
B. Root mean square value of voltage and current to its average value
C. Average value of current and voltage to its root mean square value
D. Peak value of current and voltage to its root mean square value
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these
A. Sine wave
B. Square wave
C. Triangular wave
D. Trapezoidal wave
A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 in reverse bias.
C. junction J1, J3 is in reverse bias and J2 is in forward bias.
D. junction J1 and J2 is in forward bias and J3 is in reverse bias.
A. Diac
B. Triac
C. Silicon controlled-rectifier SCR
D. None of above