DIAC and TRIAC both are semiconductors devices and conduct in____________________?

A. Breakdown of junction
B. Local hot spot
C. Insulation failure
D. None of these

A. Forward voltage triggering
B. Gate triggering
C. dV / dt triggering
D. Thermal triggering

A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 in reverse bias.
C. junction J1, J3 is in reverse bias and J2 is in forward bias.
D. junction J1 and J2 is in forward bias and J3 is in reverse bias.

A. TRIAC
B. SCR
C. GTO
D. Only (a) and (b)

A. CB
B. Snubber circuit
C. Voltage clamg device
D. Fast acting current limiting device (FACL fuse)

A. 23 mA.
B. 40 mA.
C. 10 mA.
D. 60 mA.