IC = [a / (1 – a )] IB + [___________ / (1 – a )?
A. ICBO
B. ICEO
C. IC
D. IE
TRANSISTORS
The voltage gain of a transistor connected in common collector arrangement is____________?
The voltage gain of a transistor connected in common collector arrangement is____________?
A. equal to 1
B. more than 10
C. more than 100
D. less than 1
The voltage gain in a transistor connected in___________arrangement is the highest?
The voltage gain in a transistor connected in___________arrangement is the highest?
A. common base
B. common collector
C. common emitter
D. none of the above
The power gain in a transistor connected in___________arrangement is the highest?
The power gain in a transistor connected in___________arrangement is the highest?
A. common emitter
B. common base
C. common collector
D. none of the above
The input impedance of a transistor connected in___________arrangement is the highest?
The input impedance of a transistor connected in___________arrangement is the highest?
A. common emitter
B. common collector
C. common base
D. none of the above
The value of ß for a transistor is generally____________?
The value of ß for a transistor is generally____________?
A. 1
B. less than 1
C. between 20 and 500
D. above 500
In a transistor ______________?
In a transistor ______________?
A. IC = IE + IB
B. IB = IC + IE
C. IE = IC – IB
D. IE = IC + IB
Most of the majority carriers from the emitter____________?
Most of the majority carriers from the emitter____________?
A. recombine in the base
B. recombine in the emitter
C. pass through the base region to the collector
D. none of the above
In a transistor, the base current is about_________of emitter current?
In a transistor, the base current is about_________of emitter current?
A. 25%
B. 20%
C. 35 %
D. 5%
A transistor is a___________operated device?
A transistor is a___________operated device?
A. current
B. voltage
C. both voltage and current
D. none of the above