Thermal runaway occurs when_________________?
Thermal runaway occurs when_________________? A. Collector is reverse biasedB. Transistor is not biased C. Emitter is forward biased D. Junction capacitance is high
Thermal runaway occurs when_________________? A. Collector is reverse biasedB. Transistor is not biased C. Emitter is forward biased D. Junction capacitance is high
The operating point ________________ on the a.c. load line? A. Also line B. Does not lie C. May or may not lie D. Data insufficient
The operating point is also called the _______________? A. Cut off pointB. Quiescent point C. Saturation point D. None of the above
For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than_____________? A. 10 IB B. 3 IB C. 2 IB D. 4 IB
The disadvantage of base resistor method of transistor biasing is that it_________________? A. Is complicatedB. Is sensitive to changes in ß C. Provides high stability D. None of the above
An ideal value of stability factor is________________? A. 100B. 200 C. More than 200 D. 1
The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor? A. One hundredth B. One tenthC. One thousandth D. One millionth
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________? A. 100 µA B. 25 µA C. 20 µAD. 50 µA
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________? A. 6 mA B. mAC. 3 mA D. 1 mA
The circuit that provides the best stabilization of operating point is___________________? A. Base resistor bias B. Collector feedback biasC. Potential divider bias D. None of the above