Power Electronics

A. Cmin = V / ( Vr L f2 )
B. Cmin= ( 1 – D ) V / ( Vr L f2 )
C. Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
D. Cmin= ( 1 – 2 D ) V / 42 ( Vr L f2 )

A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter

A. Flyback capacitor
B. Flyback resistor
C. Flyback transformer
D. Flyback transistor

A. Large number of reactive component
B. Low stress on switch
C. Low stress on capacitor
D. None of these

A. Only minority carriers
B. Only majority carriers
C. Both minority and majority carriers
D. None of these

A. Divert the collector current during turn – off
B. Improves the reverse bias safe operating area
C. Dissipates a fair amount of switching power
D. All of these

A. High dv / dt, low di / dt
B. Low dv / dt, low di / dt
C. Low dv / dt, high di / dt
D. High dv / dt, high di / dt

A. Motoring mode operation
B. Braking mode operation
C. Regenerative mode operation
D. None of these

A. Boost single – phase power factor converter
B. A buck dc – dc converter to reduce ripple in the intermediate dc bus capacitor
C. Both A. and B.
D. None f these

A. High power inverters
B. Rectifiers
C. Low power inverters
D. Only A. and B.