Which of the following is used in heat sink_____________?
A. Iron
B. Aluminium
C. Carbon
D Silver
Power Electronics
How can we protect SCR from thermal conditions _____________?
How can we protect SCR from thermal conditions _____________?
A. Use of snubber circuit.
B. Using heat sink.
C. Using CB and fuse.
D. Using equalizing circuit
Thyristor is nothing but a____________?
Thyristor is nothing but a____________?
A. Controlled transistor
B. Controlled switch
C. Amplifier with higher gain
D. Amplifier with large current gain
Gate circuit or triggering circuit of a thyristor is
Gate circuit or triggering circuit of a thyristor is
A. lower power circuit.
B. high power circuit.
C. magnetic circuit.
D. may be low power or high power circuit
After proper turn on of thyristor____________?
After proper turn on of thyristor____________?
A. gate signal is always present
B. gate signal must be removed
C. gate signal should present but can be removed
D. none of the above.
SCR will be turned off when anode current is_______________?
SCR will be turned off when anode current is_______________?
A. < latching current but greater than holding current and gate signal is 0.
B. less than holding current.
C. < latching current but greater than holding current and gate signal is present.
D. both (A) and (B).
The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
A. 600 V/µs
B. 800 V/µs
C. 1200 V/µs
D. 1000 V/µs
BCT is used for____________?
BCT is used for____________?
A. High power phase control
B. High power current control
C. Low power current control
D. Low power phase control
Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then________________?
Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3 respectively. Then________________?
A. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.
B. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.
C. Vc1 = Vc2 = Vc3 any value of Ig.
D. Vc1 > Vc2 > Vc3 when Ig1 ≥ Ig2 &Atil
Which of following devices has highest di/dt and dv/dt capability?
Which of following devices has highest di/dt and dv/dt capability?
A. SIT
B. SITH
C. GTO
D. SCR