Power Electronics

A. delay time
B. rise time
C. spread time
D. all

A. anode voltage drops from 10 % of its initial value to zero
B. anode current rises from 90 % to its final value
C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final value

A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times

A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base

A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C

A. IGBT
B. FCT
C. MCT
D. GTO

A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these

A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor

A. in series
B. in parallel
C. either series or parallel
D. anti parallel

A. To minimize the loss
B. To minimize the charging current
C. To minimize the discharging current
D. All of these