Maximum power loss occurs during_________________?
A. delay time
B. rise time
C. spread time
D. all
Power Electronics
Spread time is defined as the interval during which_____________?
Spread time is defined as the interval during which_____________?
A. anode voltage drops from 10 % of its initial value to zero
B. anode current rises from 90 % to its final value
C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final value
The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times
A power MOSFET has three terminals called___________?
A power MOSFET has three terminals called___________?
A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base
Rise time is defined by the interval when____________?
Rise time is defined by the interval when____________?
A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO
Delay time is defined by the interval when_______________?
Delay time is defined by the interval when_______________?
A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these
Which one is most suitable power device for high frequency (>100 KHz) switching application?
Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor
Snubber circuit is used with SCR_________________?
Snubber circuit is used with SCR_________________?
A. in series
B. in parallel
C. either series or parallel
D. anti parallel
Why resistor is used in Snubber circuit_________________ ?
Why resistor is used in Snubber circuit_________________ ?
A. To minimize the loss
B. To minimize the charging current
C. To minimize the discharging current
D. All of these