A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs
Typical range of thyristor turn OFF time is______________? Read More »
Power Electronics A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above
Power transistor are type of___________? Read More »
Power Electronics A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed
During gate recovery time_____________? Read More »
Power Electronics A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C
During reverse recovery time__________________? Read More »
Power Electronics A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device
Which of the following is true about SIT? Read More »
Power Electronics A. Delay time
B. Spread time
C. Rise time
D. Same for every case
A. Positive gate signal
B. Positive drain signal
C. Positive source signal
D. None of these
A GTO can be turned on by applying___________? Read More »
Power Electronics A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these
SITH is also known as___________? Read More »
Power Electronics A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs
The typical time of rising time lies between______________? Read More »
Power Electronics A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs
