Power Electronics

A. 3 – 10 µs
B. 3 – 50 µs
C. 3 – 100 µs
D. 3 – 500 µs

A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above

A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed

A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C

A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device

A. Delay time
B. Spread time
C. Rise time
D. Same for every case

A. Positive gate signal
B. Positive drain signal
C. Positive source signal
D. None of these

A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these

A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs

A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs