A. String efficient
B. Reliability factor
C. Factor of safety
D. Derating factor
A. holes only
B. electrons only
C. either electron or holes
D. Both electron and holes
A. series connection.
B. parallel connection.
C. anti parallel connection.
D. both B and C.
A. To limit di / dt of SCR
B. To limit dV / dt of SCR
C. For voltage equalisation
D. Both B and C
A. high current demand
B. low voltage demand
C. low current demand
D. high voltage demand
A. BJT
B. Power dioed
C. MOSFET
D. None of above
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V.
A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS
A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these
A. SIT
B. BJT
C. TRIAC
D. IGBT