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Electrical Engineering Mcqs

The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

Electrical Engineering Mcqs, Transistor Biasing /
The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

A. One hundredth
B. One tenth
C. One thousandth
D. One millionth

The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor? Read More »

Electrical Engineering Mcqs, Transistor Biasing

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

Electrical Engineering Mcqs, Transistor Biasing /
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

A. 100 µA
B. 25 µA
C. 20 µA
D. 50 µA

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________? Read More »

Electrical Engineering Mcqs, Transistor Biasing

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?

Electrical Engineering Mcqs, Transistor Biasing /
If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________?

A. 6 mA
B. mA
C. 3 mA
D. 1 mA

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to___________________? Read More »

Electrical Engineering Mcqs, Transistor Biasing

For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

Electrical Engineering Mcqs, Transistor Biasing /
For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

A. Be zero
B. Be 0.01 V
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V

For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor? Read More »

Electrical Engineering Mcqs, Transistor Biasing

For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

Electrical Engineering Mcqs, Transistor Biasing /
For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

A. Not fall below 1 V
B. Be zero
C. Be 0.2 V
D. None of the above

For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor? Read More »

Electrical Engineering Mcqs, Transistor Biasing