Bidirectional semiconductor device is___________?
		A. Diode
B. BJT
C. SCR
D. TRIAC
		A. Diode
B. BJT
C. SCR
D. TRIAC
		A. Average value of the output inductor current
B. Product of an average inductor current and a function of duty ratio
C. Either A. or B.
D. None of these
		A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
		A. Identical to line voltage in a VSI
B. Identical to line current in VSI
C. Identical to phase voltage in VSI
D. Identical to phase voltage in CSI
		A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these
		A. breakdown voltage
B. peak reverse voltage
C. holding current
D. latching current
		A. Square AC output voltage
B. Sine AC output voltage
C. Triangular AC output voltage
D. Trapezoidal AC output voltage