A power semiconductor may undergo damage due to____________?
A power semiconductor may undergo damage due to____________?
A. High di/dt
B. High dv/dt
C. Low di/dt
D. Low dv/dt
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If the gate voltage of an SCR is removed, then the_______________?
If the gate voltage of an SCR is removed, then the_______________?A. anode current decreases
B. anode current does not decrease at all
C. anode current increases
D. cathode current increasesAn SCR is made up of silicon because?
An SCR is made up of silicon because?A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germaniumVery large values of modulation index (greater than 3.24) lead to___________?
Very large values of modulation index (greater than 3.24) lead to___________?A. Square AC output voltage
B. Sine AC output voltage
C. Triangular AC output voltage
D. Trapezoidal AC output voltageThe most suited gate pulses given to the AC regulator with R – L load can be in the form of____________?
The most suited gate pulses given to the AC regulator with R – L load can be in the form of____________?A. Continuous signal
B. Large isolating pulse transformer
C. A train of pulses
D. None of theseIn BJT, switching losses occurs___________?
In BJT, switching losses occurs___________?A. Only at turn – on
B. Only at turn – off
C. Both at turn on and off
D. None of theseWhich of following is not a power transistor?
Which of following is not a power transistor?A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS