A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO
A. IGBT
B. FCT
C. MCT
D. GTO
A. Controlled transistor
B. Controlled switch
C. Amplifier with higher gain
D. Amplifier with large current gain
A. Large overlapg takes place
B. Small overlapg operation
C. No overlapg operation
D. None of these
A. By applying a gate pulse and turned off only when current becomes zero
B. And turned off by applying gate pulse
C. By applying a gate pulse and turned off by removing the gate pulse
D. By making current non zero and turned off by making current zero
A. Diode and capacitor
B. Capacitor and SCR
C. Inductor and capacitor
D. Capacitor and load
A. Root mean square value of voltage and current to its peak value
B. Root mean square value of voltage and current to its average value
C. Average value of current and voltage to its root mean square value
D. Peak value of current and voltage to its root mean square value
A. Directly proportional to Vm of supply voltage
B. Inversely proportional to Vm of supply voltage
C. Inversely proportional to L in the circuit
D. Both A and C