A. Single phase
B. 3 phase
C. Poly phase
D. Only (b) and (c)
A. voltage clamg device.
B. fuse.
C. heat sink.
D. snubber circuit.
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter
A. Both rectifiers provides positive current to the load
B. Both rectifiers provide negative current to the load
C. One rectifiers provide positive current to the load and the other negative current
D. One rectifier provide positive current to the source and the other negative current to the load
A. 0.75
B. 0.7
C. 0.2
D. 0.25
A. High speed operation
B. High rupturing capacity
C. No ageing effect
D. All of the above
A. 61%
B. 71%
C. 81%
D. 91%